Products Description
MKS Instruments GHW-25A-13DF3N 0-001 RF Generator

Technical Specifications
Model:GHW-25A-13DF3N 0-001 Brand:MKS Instruments Product Type: GHW series 13.56MHz solid-state RF plasma generator
Module Feature
MKS GHW-25A-13DF3N 0-001 is high reliability 2500W RF plasma generator, originally ENI brand under MKS group. It outputs 13.56MHz RF power for plasma process. Built-in microprocessor control, auto load mismatch protection and stable power regulation. It supports constant power, constant current and constant voltage operation modes. Widely used in semiconductor PECVD, HDPCVD, plasma etching and flat panel thin film manufacturing.
Working principle: Convert AC input power into 13.56MHz radio frequency power, deliver controlled RF energy to plasma chamber to sustain plasma discharge Onboard components: RF power amplifier module, control CPU board, power supply unit, front display panel, RF output port, interlock terminal block
LED indicatorsPower, RF output, fault and interlock LED indicators on front panel
Hardware self-diagnosis
Visual inspection, power circuit test, RF output power verification, mismatch protection test, interlock function check
Programming software
MKS RF generator configuration software for remote setpoint control, status monitoring and fault log reading
Electrical & RF Parameters
Output frequency:13.56 MHz ±0.005% Rated RF power:2500W Power regulation tolerance:±1.5% of setpoint Input power:200~240V AC
Mechanical & Structure
Mounting:19-inch rack cabinet mounting Protection class:IP20
Environmental
Operating temperature:10℃ ~ +40℃ Ambient humidity:5~95% non-condensing Certification:CE, SEMI compliant Status:MKS GHW series RF plasma generator
System compatibility
Matched with MKS RF matching networks, installed on semiconductor plasma etching and deposition vacuum chamber system.
Function
GHW-25A-13DF3N 0-001 is RF plasma power generator manufactured by MKS Instruments. It supplies precise 13.56MHz RF energy to generate and maintain plasma inside vacuum chamber. The internal circuit continuously monitors reflected power and triggers protection when severe load mismatch occurs. Amplifier damage or interlock fault will lead to no RF output and process interruption. It is core RF source for semiconductor plasma thin film process.
Installation
Follow lockout/tagout safety procedure before installation. Cut off AC power supply. Rack mount GHW-25A-13DF3N 0-001 inside electrical cabinet. Connect mains power cable, interlock signal cable and RF coaxial cable to matching network. Set operation mode, perform power output test and interlock protection verification.
Interface
AC power input terminal, RF coaxial output port, digital/analog signal I/O and interlock connector, multi status LED indicators on front panel of GHW-25A-13DF3N 0-001.
Diagnostic
No RF power output: Interlock open circuit or internal power supply failure. High reflected power: Plasma impedance mismatch or matching network fault. Power unstable: Amplifier module aging or cooling fan malfunction. System alarm: Over temperature or over current protection triggered.

Product Brief
GHW-25A-13DF3N 0-001 MKS Instruments ENI GHW25A RF plasma generator,13.56MHz 2500W solid state RF power supply,for semiconductor PECVD and etching plasma process,rack mounted RF power source.