Huttinger MAPKST0017 RF Power Transistor

Technical Specifications

Model：MAPKST0017 Brand：Huttinger Product Type: RF power transistor

Module Feature

Huttinger MAPKST0017 is high-power ceramic packaged RF power transistor designed for Huttinger RF generator. It provides high frequency power amplification for 13.56MHz plasma power supply. It features high power density, low thermal resistance and excellent high frequency stability. Widely applied in semiconductor PVD, CVD and plasma etching vacuum equipment. Working principle: RF power amplification Application frequency:13.56MHz Onboard components: High-frequency transistor die, ceramic package, metal heat sink, connecting terminals

LED indicators

Not equipped

Hardware self-diagnosis

Continuity test, insulation resistance test, power gain test, thermal performance inspection

Programming software

No dedicated software required

Electrical Parameters

Working frequency:13.56MHz Application: Matched with Huttinger TIG series RF generator

Mechanical & Structure

Mounting: Screw mounting on heat sink Protection class: IP20

Environmental

Operating temperature:10℃ ~ +45℃ Ambient humidity:5~85% non-condensing Certification: CE Status: Huttinger RF power transistor

System compatibility

MAPKST0017 is compatible with Huttinger TIG series RF generator and matching network for semiconductor vacuum plasma processing equipment.

Function

MAPKST0017 is core RF power transistor manufactured by Huttinger. It amplifies low-level RF driving signal into high power RF output to excite plasma. Ceramic package with good heat dissipation. It has over-temperature and over-current withstand capability. It is critical spare part for RF generator power amplifier overhaul.

Installation

Follow lockout/tagout safety procedure before installation. Cut off all power and discharge high voltage components. Replace the old RF transistor, apply thermal grease and tighten mounting screws. Check insulation clearance and electrical connection. Restore power and run RF power output test.

Interface

RF signal terminals, fixed mounting holes, no LED indicators on MAPKST0017.

Diagnostic

No RF power output: Damaged transistor or poor thermal contact. Low RF power gain: Transistor aging or parameter drift. Overheat alarm: Insufficient heat dissipation or transistor internal leakage.

Product Brief

MAPKST0017 Huttinger RF generator high frequency power transistor,matched with TIG series RF generator,used for semiconductor vacuum plasma coating and etching equipment maintenance,RF power transistor spare part.